Self-aligned, extremely high frequency III-V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates
Journal
Nano Letters
Journal Volume
12
Journal Issue
8
Pages
4140 - 4145
Date Issued
2012
Author(s)
Abstract
This paper reports the radio frequency (RF) performance of InAs nanomembrane transistors on both mechanically rigid and flexible substrates. We have employed a self-aligned device architecture by using a T-shaped gate structure to fabricate high performance InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with channel lengths down to 75 nm. RF measurements reveal that the InAs devices made on a silicon substrate exhibit a cutoff frequency (f t) of ∼165 GHz, which is one of the best results achieved in III-V MOSFETs on silicon. Similarly, the devices fabricated on a bendable polyimide substrate provide a f t of ∼105 GHz, representing the best performance achieved for transistors fabricated directly on mechanically flexible substrates. The results demonstrate the potential of III-V-on-insulator platform for extremely high-frequency (EHF) electronics on both conventional silicon and flexible substrates. © 2012 American Chemical Society.
Subjects
flexible electronics; III-V-on-insulator; radio frequency transistors; two-dimensional membranes; XOI
Other Subjects
Channel length; Extremely high frequencies; Flexible substrate; High frequency HF; III-V-on-insulator; InAs; Metal-oxide-semiconductor field-effect transistor; MOSFETs; Nanomembranes; Polyimide substrate; Radio frequencies; Radio frequency transistors; RF measurements; Rigid and flexible substrates; Self-aligned; Self-aligned devices; Silicon substrates; T-shaped gate; XOI; Cutoff frequency; Flexible electronics; Indium arsenide; MOSFET devices; Polyimides; Radio waves; Substrates
Type
journal article