Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures
Resource
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Journal
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Pages
-
Date Issued
2001-07
Date
2001-07
Author(s)
Feng, Shih-Wei
Cheng, Yung-Chen
Yang, C.C.
Tsai, Chin-Yi
Lin, Yen-Sheng
Hsu, Chen
Ma, Kung-Jeng
Chyi, Jen-Inn
DOI
N/A
Abstract
Localization energies of localized states of InGaN/GaN quantum well structures were obtained by fitting the data of photoluminescence (PL) and amplified spontaneous emission. The two-component decay times in time-resolved PL show consistent results.
SDGs
Type
journal article
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