Catalytic Growth of Silicon Nanowires Assisted by Laser Ablation
Resource
Journal of Physical Chemistry B 108 (3): 846-852
Journal
Journal of Physical Chemistry B
Journal Volume
108
Journal Issue
3
Pages
846-852
Date Issued
2004
Date
2004
Author(s)
Abstract
Silicon nanowires (SiNWs, diameter ≥ 5 nm, and length ∼ μm) have been fabricated with metal- and SiO2-catalyses assisted by laser ablation. In the catalytic growth of single-crystalline SiNWs by pure metal catalysts (Fe, Ru, and Pr), Si {111} is found to be the most stable plane and wire growth axis is along 〈111〉. The growth mechanism follows a vapor−liquid−solid process, and the synthesized SiNWs typically have metal-tips composed of metal and Si, such as FeSi2, RuSi3, and PrSi4, respectively. In sharp contrast, a crystalline growth axis of 〈111〉 and a wire growth axis of 〈112〉 are the result in the SiNWs catalyzed by SiO2. Besides, the SiO2-catalytic SiNWs generally have no tips at the wire ends. Distinctive growth mechanisms resulting from metal- and SiO2-catalyses will be discussed. Pressure effect on the longitudinal and transverse growing rates in the fabrication of SiNWs has been examined.
Type
journal article
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