The Growth and Characteristics of p-i-n Silicon Nanowire Device
Date Issued
2009
Date
2009
Author(s)
Wang, Chen-Yun
Abstract
The electric-field directed growth of silicon nanowire (SiNWs) p-i-n junctionas fabricated successfully by chemical vapor deposition via the vapor-liquid-solidVLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD)ystem. In this thesis, the length of SiNWs as a function of growth time was firstnvestigated. Then the electric and structure properties of the SiNWs were measuredsing a series of analysis tools. The growth mechanism and electrical characteristics ofiNWs p-i-n junction are investigated and explained. .the repeated I-V measurement of-i-n junction SiNWs are also demonstrated. In the end, the electrostatic forceicroscopy (EFM) was used to define the position of p-I and i-n junctions in theiNWs.
Subjects
Silicon Nanowire
Type
thesis
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