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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strain
Details
Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strain
Journal
ECS Transactions
Journal Volume
50
Journal Issue
9
Pages
151-155
Date Issued
2012
Author(s)
CHIH-WEN LIU
Lan, H.-S.
Chen, Y.-T.
Lin, J.-Y.
CHIH-WEN LIU
DOI
10.1149/05009.0151ecst
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84885718049&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/370964
Type
conference paper
