Publication: Optoelectronic properties of Cu<inf>3</inf>N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics
| cris.lastimport.scopus | 2025-04-29T22:11:02Z | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0000-0003-2942-4520 | en_US |
| cris.virtualsource.department | 5dbc51be-37d2-46ca-bdcb-00e133af2ec0 | |
| cris.virtualsource.orcid | 5dbc51be-37d2-46ca-bdcb-00e133af2ec0 | |
| dc.contributor.author | Chen, S.-C. | en_US |
| dc.contributor.author | Huang, S.-Y. | en_US |
| dc.contributor.author | Sakalley, S. | en_US |
| dc.contributor.author | Paliwal, A. | en_US |
| dc.contributor.author | Chen, Y.-H. | en_US |
| dc.contributor.author | Liao, M.-H. | en_US |
| dc.contributor.author | Sun, H. | en_US |
| dc.contributor.author | Biring, S. | en_US |
| dc.contributor.author | MING-HAN LIAO | en_US |
| dc.creator | MING-HAN LIAO;Biring, S.;Sun, H.;Liao, M.-H.;Chen, Y.-H.;Paliwal, A.;Sakalley, S.;Huang, S.-Y.;Chen, S.-C. | |
| dc.date.accessioned | 2020-01-13T08:22:33Z | |
| dc.date.available | 2020-01-13T08:22:33Z | |
| dc.date.issued | 2019 | |
| dc.identifier.doi | 10.1016/j.jallcom.2019.02.268 | |
| dc.identifier.scopus | 2-s2.0-85062629566 | |
| dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/447941 | |
| dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062629566&doi=10.1016%2fj.jallcom.2019.02.268&partnerID=40&md5=f352721d0681c6ff6d235ad926c7c70a | |
| dc.relation.ispartof | Journal of Alloys and Compounds | |
| dc.relation.journalvolume | 789 | |
| dc.relation.pages | 428-434 | |
| dc.title | Optoelectronic properties of Cu<inf>3</inf>N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics | en_US |
| dc.type | journal article | en |
| dspace.entity.type | Publication |