Growth of strained Si on high-quality relaxed Si1?xGex with an intermediate Si1?yCy layer

Resource

The Journal of Vacuum Science and Technology A 23 (4): 1141-1145

Journal

The Journal of

Journal Volume

Vacuum

Journal Issue

4

Pages

1141-1145

Date Issued

2005

Date

2005

Author(s)

Lee, S. W.

Chueh, Y. L.

Chen, L. J.

Chou, L. J.

Chen, P. S.

Lee, M. H.

Tsai, M.-J.

Liu, C. W.

URI

http://ntur.lib.ntu.edu.tw//handle/246246/148228

Type

journal article

File(s)

Name

56.pdf

Size

347.35 KB

Format

Adobe PDF

Checksum

(MD5):fd5911b0f0e0cb95c72507be9e1ac014