Time-resolved laser spectroscopy of nitride semiconductors
Resource
Materials Science & Engineering B,59,147-149.
Journal
Materials Science and Engineering B
Pages
147-149
Date Issued
1999-01
Date
1999-01
Author(s)
Long, Frederick H.
Pophristic, Milan
Tran, Chuong
Kalicek, Robert F.
Feng, Zhe Chuan
Ferguson, Ian
Abstract
Time-resolved photoluminescence studies of InGaN films, multiple quantum wells (MQWs), and light-emitting-diodes (LEDs) were carried out at room temperature. The role of nanoscale fluctuations in the indium concentration was clarified.
Type
journal article
