新型光電材料、元件及雷射光源( II) - 子計劃四: 半導體體光電材料及元 件之研究四
Date Issued
2000-07-31
Date
2000-07-31
Author(s)
DOI
892215E002034
Abstract
In this study, we report the growth of
InAsN alloys on InP substrates by using RF
plasma assisted molecular beam epitaxy.
The structural, electrical and optical
properties of the alloy film are also
investigated by using DXRD, Hall, and
FTIR measurements. The highest nitrogen
composition obtained in this study is 5.1%.
In electrical properties, we found that the
more the nitrogen composition, the higher
the residual free carrier concentration. We
also found that the fundamental absorption
edge of InAsN is shifted toward higher
energy as compared to that of InAs. The
phenomeneon seems controversy to the
theoretical prediction and the previous
results. After considering the band filling
effect, the band gap bowing effect due to N
atom incorporation in InAs is reappeared.
Subjects
InAsN
RF plasma assisted
GSMBE
GSMBE
bowing effect
Publisher
臺北市：國立臺灣大學電機工程學系暨研究所
Type
report
File(s)![Thumbnail Image]()
Loading...
Name
892215E002034.pdf
Size
51.45 KB
Format
Adobe PDF
Checksum
(MD5):5dfdad8b9d203c6fbfc676d436f75e44