Ultrafast carrier-carrier scattering in Al x Ga 1-x As/GaAs quantum wells
Journal
Physica B: Condensed Matter
Journal Volume
272
Journal Issue
1-4
Pages
387-390
Date Issued
1999
Author(s)
Abstract
Time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of a highly nonequilibrium carrier distribution in the p-doped Al0.32Ga0.68As/GaAs quantum wells are presented. The initially photoexcited nonthermal carrier distribution is quickly broadened due to rapid increase of the inelastic carrier-carrier scattering as the injected carrier densities increased toward 1011 cm-2.
Type
journal article