Investigation of Nonradiative Traps in InGaN/GaN Multiple Quantum Wells
Date Issued
2007
Date
2007
Author(s)
Chen, I-Jen
DOI
en-US
Abstract
In this thesis, we report an investigation of two-wavelength excited photoluminescence on InGaN/GaN multiple quantum wells to study the nonradiative defects. It is found that with an addition below-gap excitation the photoluminescence intensity can be quenched by up to 50%. In addition, the decay time of localized carriers changes from 173.9 ns to 7.9 ns. The quenching ratio depends on the power of the below-gap excitation. The experimental results can be well explained in terms of the electronic transitions involving deep defect states in the GaN barrier. Based on the variation of the photon energy of the below-gap excitation, the origin of the deep trap can be identified. We point out here that two wavelength excitation spectroscopy is a powerful non-destructive tool to reveal nonradiative defects in optoelectronic devices.
Subjects
氮化銦鎵
氮化鎵
量子井
螢光光譜
InGaN
GaN
quantum well
PL
Type
thesis
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