Surface properties of Si-doped GaN films
Journal
2003 International Semiconductor Device Research Symposium
Journal Volume
58
Journal Issue
20
Pages
106-107
Date Issued
1998
Author(s)
Lin, T.Y.
Abstract
In this paper we report surface properties of Si-doped GaN films by electric force microscopy and its influence on photoluminescence spectra. The increased PL ratio of the UV luminescence is indicative of reduction in surface recombination velocity due to the changes of surface states.
Type
conference paper