Modeling of Amorphous InGaZnO4 Thin Film Transistors and Their Subgap Density of States
Journal
Applied Physics Letters
Journal Volume
92
Journal Issue
13
Pages
133503
Date Issued
2008-01
Author(s)
Abstract
We report a model of the carrier transport and the subgap density of states in amorphous InGaZnO4 (a-IGZO) for device simulation of a-IGZO thin-film transistors (TFTs) operated in both the depletion mode and the enhancement mode. A simple model using a constant mobility and two-step subgap density of states reproduced well the characteristics of the a-IGZO TFTs. a-IGZO exhibits low densities of tail states and deep gap states, leading to small subthreshold swings and high mobilities.
Type
journal article