Optical frequency response analysis of light-emitting transistors under different microwave configurations
Journal
Applied Physics Letters
Journal Volume
103
Journal Issue
5
Date Issued
2013
Author(s)
Abstract
In this report, the optical frequency responses of InGaP/GaAs heterojunction bipolar light-emitting transistors are measured and analyzed using electrical small-signal equivalent circuit models under common-emitter, common-base, and common-collector configurations. Different optical modulation amplitudes and bandwidths, f3 dB, are obtained due to different input impedances and electrical transfer functions. The optical response of light-emitting transistors is able to be “tuned” by different input ports due to unique three-terminal characteristics along with carrier-photon conversion in the base region. From microwave analyses, identical “intrinsic” optical responses can be determined under three configurations at same DC bias condition.
SDGs
Type
journal article