Study of random telegraph noise in UTBOX Silicon-on-Insulator nMOSFETs
Journal
ECS Transactions
Journal Volume
60
Journal Issue
1
Pages
109-114
Date Issued
2014
Author(s)
Abstract
This paper reports on the behavior of Random Telegraph Signals (RTSs) in ultra-thin buried oxide (UTBOX) Silicon-on-Insulator (SOI) nMOSFETs. Emphasis is on the amplitude ΔID, which is studied in function of the front-gate, the back-gate and the drain bias. As will be shown, a careful analysis of the drain-to-source bias-dependence in forward and reverse operation enables to determine the lateral trap position in the channel. Combined with the back-gate voltage dependence, it is concluded that the Generation- Recombination (GR) centers responsible for the RTS are in the silicon film rather than in the gate oxide. © 2014 The Electrochemical Society.
Other Subjects
MOSFET devices; Silicon on insulator technology; Back-gate voltages; Buried oxides; Random telegraph noise; Random telegraph signals; Reverse operations; Silicon films; Silicon-on-insulators; Trap positions; Electric breakdown
Type
conference paper