A L.2V broadband D-band power amplifier with 13.2-dBm output power in standard RF 65-nm CMOS
Journal
IEEE MTT-S International Microwave Symposium Digest
Date Issued
2012
Author(s)
Tsai, Z.-M.
Liao, H.-C.
Hsiao, Y.-H.
Wang, H.
Liu, J.Y.-C.
Chang, M.-C.F.
Teng, Y.-M.
Huang, G.-W.
Abstract
A D-band CMOS power amplifier in 65-nm CMOS with wider than 30 GHz small signal gain bandwidth is developed by using proposed impedance transform network to split original matching network into 8-ways to integrate 8 transistors. Without using additional combining networks, the 4-stage power amplifier achieves 13.2 dBm saturation output power with 1.2 V supply at 140 GHz in a compact size of 0.38 mm 2 . The peak power-added efficiency is 14.6% with 115.2 mW dc power.
SDGs
Type
conference paper