Investigation photoelectric property of amorphous silicon carbon nitride.
Date Issued
2004
Date
2004
Author(s)
Huang, Chen-Chia
DOI
zh-TW
Abstract
Since the theoretical prediction by Liu and Cohen, the hypothetical β-C3N4 which is covalent bonded has an expected hardness comparable or even greater than diamond. A tremendous effort has been put forth to synthesize and characterize such materials. However Si, C, N, ternary compound have excellent hardness to compete with cubic BN and have 3.8~4.7eV wide band gap. It maybe possesses high power, high speed conductive electric property, so it has great potential application in violet light device. In my laboratory process experience, amorphous ternary SiCN thin film is synthesized successfully by MWCVD (microwave plasma enhanced chemical vapor deposition). Some group couldn’t find Si-C bond in MWCVD system for a long time. The reason is that β-Si3N4 andβ-C3N4 have the same basic structure, it might be expected that both should be miscible. In another hand, I try to introduce new idea that Si-N bond sensitivity is better than Si-C band. I also discuss the carbon content effect on reflection, transmission, tauc gap. Finally transmission at low temperature and application for UV photo detector are also investigated. This thesis is divided into two parts:
1.Chapter 4:Bonding state transition from Si-C to Si-N and optical properties analysis.
2.Chapter 5:Carbon effect on amorphous SiCN film and application for UV detector.
In my experiments, the composition, bonding type, crystallization, refractive index (n) and extinction coefficient (k), and surface morphology characterization of the film were carried out by EDS (energy disperse spectroscopy), XPS(X-ray photoelectron spectroscopy), XRD, Raman, SEM individually.
Subjects
矽碳氮三元薄膜
SiCN
Type
thesis
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