A Wide-Band Millimeter-Wave Transition Design Using Multi-layered LTCC Package Technology
Date Issued
2010
Date
2010
Author(s)
Tsai, Chih-Chun
Abstract
A wide-band microstrip-to-microstrip via transition used for connecting an integrated circuit chip and an antenna array on the opposite sides of a multi-layer low-temperature co-fired ceramic substrate is investigated in this paper. The via transition is decomposed into external and internal segments to facilitate the design. The equivalent impedance of the internal segment, consisting of a multi-layered through-hole via with four ground vias, is calculated from the lump-circuit model generated by Ansoft Q3D Extractor. The electrical performances of the external segments, consisting of via to microstrip line transitions, are evaluated as microstrip-to-coax transitions for choosing appropriate physical parameters. Finally, the geometrical parameters of entire transition are obtained by combining the results of the external and internal segments. It has been demonstrated, through the simulation results by commercial software Ansoft HFSS, that the return loss is better than 19dB over a band from DC up to 70GHz with an in-band insertion loss better than 0.48dB. Coherent results between simulation and measurement are also obtained with a back-to-back transition structure. Additionally, based on the design guideline of equal line length and same number of corners, the layout of microstrip lines between integrated circuit chip and antenna array is also proposed. Finally the simulation result shows the phase difference is in two degrees and near-end crosstalk and far-end crosstalk are both better than 26dB between each microstrip line up to 70GHz.
Subjects
LTCC
wide-band interconnects
via-transition
Type
thesis
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