Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer

Journal

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Journal Volume

23

Journal Issue

4

Pages

1141-1145

Date Issued

2005

Author(s)

Lee, S.W.

Chueh, Y.L.

Chen, L.J.

Chou, L.J.

Chen, P.S.

Lee, M.H.

Tsai, M.-J.

DOI

10.1116/1.1913679

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/502128

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-31044433060&doi=10.1116%2f1.1913679&partnerID=40&md5=c87c658d7d7a2634ded920f18c43710b

Type

conference paper