Domain matching epitaxial growth of high-quality ZnO film using a Y 2O3 buffer layer on Si (111)
Journal
Crystal Growth and Design
Journal Volume
9
Journal Issue
1
Pages
239-242
Date Issued
2009
Author(s)
Abstract
High-quality ZnO epitaxial films have been grown by pulsed-laser deposition on Si (111) substrates using a nanothick high-k oxide Y2O3 buffer layer. Determined by X-ray diffraction and transmission electron microscopy, the epitaxial relationship between ZnO and Y2O3 follows (0001)⟨21̅1̅0⟩ZnO
(111)⟨101̅⟩Y2O3. ZnO lattice aligns with the hexagonal O sublattice in Y2O3 and the interfacial structure can be well described by domain matching epitaxy with 7 or 8 ZnO {112̅0} planes matching 6 or 7 {44̅0} planes of Y2O3 and lead to a significant reduction of residual strain. Superior optical properties were obtained even for ZnO films as thin as 0.21 μm from photoluminescence results.
Type
journal article