Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors
Journal
ACS Nano
Journal Volume
18
Journal Issue
27
Start Page
17622
End Page
17629
ISSN
1936-0851
1936-086X
Date Issued
2024-06-26
Author(s)
Hao-Yu Chen
Hung-Chang Hsu
Jhih-Yuan Liang
Bo-Hong Wu
Yi-Feng Chen
Chuan-Chun Huang
Ming-Yang Li
Iuliana P. Radu
Abstract
Engineering atomic-scale defects has become an important strategy for the future application of transition metal dichalcogenide (TMD) materials in next-generation electronic technologies. Thus, providing an atomic understanding of the electron-defect interactions and supporting defect engineering development to improve carrier transport is crucial to future TMDs technologies. In this work, we utilize low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) to elicit how distinct types of defects bring forth scattering potential engineering based on intervalley quantum quasiparticle interference (QPI) in TMDs. Furthermore, quantifying the energy-dependent phase variation of the QPI standing wave reveals the detailed electron-defect interaction between the substitution-induced scattering potential and the carrier transport mechanism. By exploring the intrinsic electronic behavior of atomic-level defects to further understand how defects affect carrier transport in low-dimensional semiconductors, we offer potential technological applications that may contribute to the future expansion of TMDs.
Subjects
Atomic defect engineering
Intervalley quasiparticle interference
Phase shift
Scanning tunneling microscopy
Transition metal dichalcogenides
Publisher
American Chemical Society (ACS)
Type
journal article