Stress distribution and curvature in graded semiconductor layers
Journal
Journal of Crystal Growth
Journal Volume
258
Journal Issue
3-4
Pages
302-309
Date Issued
2003
Author(s)
Abstract
The elastic stress distribution resulting from both lattice mismatch and thermal mismatch in a film/graded layer/substrate system is considered. Both numerical and analytical models have been developed previously to analyze this problem. An alternative analytical model is developed in the present study to derive the exact closed-form solution. Specific results are calculated for the GaAs/graded GaAs-Si/Si systems. The present results agree with existing numerical and analytical results. The difference between the present analytical model and existing analytical models is discussed. ? 2003 Elsevier B.V. All rights reserved.
Subjects
A1. Modeling
A1. Stresses
B1. Graded layers
B2. Semiconducting gallium arsenide
Type
journal article