Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes
Journal
Applied Physics Letters
Journal Volume
78
Journal Issue
5
Pages
637-639
Date Issued
2001
Author(s)
Abstract
Metal–oxide–silicon tunneling diodes with SiO2/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (<3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si–D bond bending mode and the transverse optical phonon of bulk silicon.
SDGs
Type
journal article