Planar and 3D Ge FETs
Journal
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology
Date Issued
2012
Author(s)
Abstract
The strain response of high mobility Ge nFETs, low EOT (~1 nm) ZrO 2 Ge nFETs, and triangular Ge pFinFETs are reported. The strain response of (111) substrates is smaller than (001) substrates under tensile strain along channel direction. Low EOT gate-last Ge nFETs using ZrO 2 gate dielectric with nearly no interfacial layer is demonstrated with the superior electrical performance. Moreover, the triangular Ge GAA pFinFET with fin width (W fin ) of 52nm and L g of 183nm has I on /I off = 10 5 , SS= 130mV/dec, and I on =235 A/m at -1 V. T he dislocated Ge near Ge/Si interface on SOI was etched and formed nearly defect-free channels.
SDGs
Type
conference paper