Flame Retardant of Silicon Dioxide Film Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition
Date Issued
2008
Date
2008
Author(s)
Liao, Ming-Wei
Abstract
Atmospheric pressure (AP) plasma chemical vapor deposition (CVD) process is utilized in this paper. We coated silica films on polycarbonate (PC) to enhance the flame retardant of PC. The AP apparatus is developed by ITRI. The plasma reactor operates by feeding helium gas between two electrodes driven by a Radio frequency (RF) power at 13.56 MHz at atmospheric pressure and near room temperature. The organic silicon source tetraethoxysilane (TEOS) was utilized as the precursor of silica films. With distinct experiment factors, such as the flow rate of precursor, power and flow rate of oxygen, we measure the thickness to calculate deposition rate, surface roughness, and porosity of the film. Moreover, the variation of the film’s properties were analyzed by Fourier-transform infrared spectrometer (FTIR), atomic force microscope (AFM) and scanning electron microscopy (SEM). The promotion of PC’s flame retardant is illustrated by limiting oxygen index. The result presented the porosity of the silica film deposited by AP-PECVD increased with higher deposition rate. We should choose the lower deposition rate experiment parameter to get the denser film. The denser film coated on PC raised the LOI value from 22 to 27. However, the porous film can’t contribute any promotion to LOI value.
Subjects
Atmospheric pressure plasma
SiO2
porosity
flame retardant
limiting oxygen index
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-97-R95522640-1.pdf
Size
23.53 KB
Format
Adobe PDF
Checksum
(MD5):a5e2ebc674873c6e225bd8338eabe610