Dynamics of molecular excitons near a semiconductor surface studied by fluorescence quenching of polycrystalline tetracene on silicon
Journal
Chemical Physics Letters
Journal Volume
601
Pages
33-38
Date Issued
2014
Author(s)
Piland, G.B.
Burdett, J. J.
Hung, T. Y.
Chen, P. H.
Lin, C. F.
Chiu, T. L.
Lee, J. H.
Bardeen, C. J.
Abstract
Tetracene, a molecule that undergoes singlet fission, is deposited on Si with variable thickness LiF spacer layers. In agreement with earlier work (Hayashi et al., 1983 [10]), the fluorescence intensity of the tetracene greatly increases as the LiF thickness approaches 100 nm. This increase is partly due to a 30% increase in the prompt fluorescence decay time but mostly results from weaker coupling of the luminescence into the Si substrate. A decrease in the prompt fluorescence lifetime is observed as the tetracene thickness is increased on bare Si. We find no evidence for triplet energy transfer to the Si. © 2014 Elsevier B.V. All rights reserved.
SDGs
Type
journal article