Effect of selective ion-implanted p-{GaN} on the junction temperature of {GaN}-based light emitting diodes
Journal
Optics Communications
Journal Volume
282
Journal Issue
5
Pages
835--838
Date Issued
2009
Author(s)
Abstract
A low-junction-temperature light emitting diode (LED) by selectively ion-implantation in part of the p-type GaN layer is demonstrated. The junction temperature extracted from a forward voltage method of an ion-implanted LED is significantly lower than that of a conventional LED. Furthermore, the linearity of the luminescence-current curve of the device is improved without altering electrical properties. © 2008 Elsevier B.V. All rights reserved.
SDGs
Type
journal article