Investigation on helium ion beam lithography with proximity effect correction
Journal
Journal of Micro/Nanopatterning, Materials and Metrology
Journal Volume
20
Journal Issue
3
Date Issued
2021
Author(s)
Abstract
Our work presents and investigates the effectiveness of a model-based proximity effect correction method for helium ion beam lithography (HIBL). This method iteratively modulates the shape of a pattern by a feedback compensation mechanism until the simulated patterning fidelity satisfies specific constraints. A point spread function (PSF) is utilized to account for all phenomena involved during the scattering events of incident ion beam particles in the resist. Patterning prediction for subsequent correction process is derived from the energy intensity distribution due to convolution between the PSF and the pattern, with an adequate cut-off threshold. The performance of this method for HIBL is examined through several designed layouts from 15- to 5-nm in half pitches, under specific process parameters, including acceleration voltage, resist thickness, and resist sensitivity. Preliminary results show its effectiveness in improving the patterning fidelity of HIBL. ? 2021 Society of Photo-Optical Instrumentation Engineers (SPIE).
Subjects
ion beam lithography
point spread function
proximity effect correction
Electron beam lithography
Helium
Ion beam lithography
Ion beams
Ions
Iterative methods
Beam particles
Compensation mechanism
Correction method
Feedback compensation
Helium ion beams
Incident ions
Model-based OPC
Point-Spread function
Proximity-effect corrections
Scattering events
Optical transfer function
SDGs
Type
journal article