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College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
Stress-Induced Outdiffusion of Be in P+ GaAs Prepared by Molecular Beam Epitaxy
Details
Stress-Induced Outdiffusion of Be in P+ GaAs Prepared by Molecular Beam Epitaxy
Journal
Journal of Applied Physics
Journal Volume
72
Pages
2767-2772
Date Issued
1992
Author(s)
Liu, Biing-Der
Shieh, T. H.
Wu, Ming-Yen
Chang, T. C.
Lee, Si-Chen
Lin, Hao-Hsiung
DOI
10.1063/1.351527
URI
http://ntur.lib.ntu.edu.tw//handle/246246/108148
SDGs
[SDGs]SDG6
Type
journal article
