Development of Resistive Random Access MemoryPICE Model and Analysis of Thin Film Transistor Noise nd Solar Cell Efficiency
Date Issued
2009
Date
2009
Author(s)
Yang, Shang-Chi
Abstract
In this thesis, the first part is developing the Resistive random access memory SPICE model. Resistive random access memory (RRAM) is one of the many types of nonvolatile memory, which utilizes the switching between high resistance state (HRS) and low resistance state (LRS) by the applied voltage to record logic 1 and logic 0. The RRAM boasts of low operating voltage and low power (program voltage < 2 V, read voltage ~ 0.1 V), good scalability (because of its simple structure, which is usually a binary transition-metal oxide sandwiched by two metal electrodes), multilevel cell (MLC) operation (strongly boost the density of memory), ultra-fast read and program speed (< 10 ns), high endurance (> 10 years), and reliable data retention time. The RRAM, as well as phase change random access memory (PCRAM), are main competitors in next-generation nonvolatile memory. To the industrial sector, it is imperative to verify the circuit design before mass-producing the integrated circuit products, which ensures the success of the tapeout. Therefore, we will use commercial HSPICE software to develop an RRAM SPICE circuit model. A compact SPICE model will greatly enhance the simulation speed of today’s memory product composed of several millions unit cells.he second part is the physical analysis of low frequency of thin film transistors. We propose a simple physical model to explain the experimented results and develop a spice model with Eldo applying to circuit simulation. In addition, gives a simple RFID tag simulation using TFT process. The third part is about the spiral inductors fabricated on glass substrate. Finally, we analyze the efficiency degradation of solar cell modules due to cell non-uniformity distribution.
Subjects
resistive random access memory
phase change memory
TFT
spiral inductors
solar cell
Type
thesis
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