A low-power Ka-band voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology
Journal
IEEE Transactions on Microwave Theory and Techniques
Journal Volume
53
Journal Issue
5
Pages
1672-1679
Date Issued
2005
Author(s)
Abstract
An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-μm 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. This VCO can operate from a supply voltage of 1.6-2.5 V. A single-sideband phase noise of -99 dBc/Hz at 1-MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz. The frequency tuning constant of the VCO in the linear regime is -0.547 GHz/V. © 2005 IEEE.
Subjects
1/f noise; Heterojunction bipolar transistor (HBT); Ka-band; Line inductor; Low power; Microstrip line; Phase noise; Silicon-germanium (SiGe); Voltage-controlled oscillator (VCO)
Other Subjects
Electric inductors; Frequencies; Heterojunction bipolar transistors; Microstrip lines; Resonators; Semiconducting germanium; Semiconducting silicon; Spurious signal noise; Voltage control; 1/f noise; K α-band; Line inductors; Low power; Phase noise; Silicon-germanium (SiGe); Variable frequency oscillators
Type
journal article