A CMOS Low Noise Amplifier with Gm-boosting Technique for Multi-band 5G Systems

This paper presents a broadband 90-nm CMOS low-noise amplifier (LNA) for multi-band 5G millimeter-wave (mmW) applications. The second stage amplifier utilizes the transconductance (gm)-boosting technique to increase the gain peak at the high-frequency range and obtain a broadband performance. The measured small-signal gain is greater than 18.5 dB in the frequency range of 18 GHz to 45 GHz, and the measured gain is 18.3 dB/21.3 dB at 28 GHz/39 GHz, and the measured noise figure (NF) is less than 4.8 dB from 20 to 45 GHz. The 1 dB compression output power at 28 GHz and 39 GHz is -0.25 dBm and -0.34 dBm, respectively.