Raman Studies of Si, Ge and Raman Application of Microcrystalline Si
Date Issued
2009
Date
2009
Author(s)
Yang, Yu-Heng
Abstract
In this thesis, the strain effect on Raman spectrum of Si/Ge at different substrate orientations and the crystallinity of the microcrystalline silicon thin film are investigated. By the secular equation deduced from the lattice dynamical theory, the linear relationship between Raman frequency shift and strain can be predicted. According to selection rules, the polarization of the incident laser light will affect the Raman frequency shift. In other words, the linear relationship between Raman shift and strain will vary with distinct laser polarization. For Si, red-shift are observed under uniaxial and biaxial tensile strain. However, the unusual blue-shift of Ge Raman peak are observed at specific laser polarization on (110) and (111) substrate. The experimental data agree reasonably with the simulation results. Moreover, the optimized phenomenological constant (p, q and r) are proposed in this theses. The approaches that analyze the crystallinity of microcrystalline silicon thin film are introduced and studied. During the measurement of the microcrystalline silicon thin film, the temperature induced by laser power will influence the Raman spectrum. Thus the thermal effect such as laser annealing and laser heating are discussed.
Subjects
Strain
Stress
Raman
Crystallinity
Type
thesis
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