The luminescent characteristics of metal-oxide-semiconductor structure with Germanium quantum dots
Date Issued
2006
Date
2006
Author(s)
Chiu, Chih-Chiang
DOI
zh-TW
Abstract
The advantage of the optoelectronic component of silicon germanium is fully compatible with the Si-based microelectronic chips. Because SiGe-based optoelectronic devices can be tailored from 1.3 to 1.55 um, it increases the importance of this material system to fiber communication applications. With the ripe process technology of the several key devices like SiGe-based light emitters, photodetectors, modulators, and waveguides, it also opens the door for Si-based optical and electronic integrated circuits (OEICs).
In this thesis we fabricated a device which has the basic MOS structure and we embedded Ge dots in the oxide. This device can be served as a memory that we can distinguish 0 and 1 from the luminescent intensity of Ge dots. Therefore we can integrate this device into OEICs.
First, we fabricated the basic metal-oxide-semiconductor and measured the spectrum and I-V curve. We also study the current transport principle and luminescent characteristics. Then, we embedded Ge dots in the oxide layer of the MOS. The dots can be used to store the charges, and this device is non-volatile memory. We found that electrons or holes will be stored in Ge dots by giving positive or negative bias. When we apply the electrons into the dots, the state which we pre-charge holes will be luminescence and the other state will not. So we can use the luminescence of Ge dots to distinguish 0 and 1.
Subjects
金屬-氧化物-半導體
鍺量子點
MOS
Ge quantum dot
tunneling
Type
thesis
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