Characterization of three-dimensional GaAs/AlxOy near-infrared photonic crystals fabricated by using an auto-cloning technique
Journal
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003
Pages
1024-1025
Date Issued
2003-10
Author(s)
Abstract
A series of three-dimensional photonic crystals are fabricated. The existence of photonic bandgap is demonstrated in the near-infrared wavelength range and bandgap position shows red-shift with increasing feature size of photonic crystals.
Other Subjects
Deposition; Light transmission; Optical variables measurement; Oxidation; Scanning electron microscopy; Semiconducting gallium arsenide; Energy gap; Fabrication; Gallium arsenide; III-V semiconductors; Infrared devices; Nanostructures; Photonics; Auto-cloning technique; Face centered cubic structure; Optical transmission measurement; Photonic bandgap; Photonic crystals; Crystal structure; Photonic crystals; Feature sizes; Near Infrared; Near-infrared; Near-infrared wavelength; Three dimensional photonic crystals; Wavelength ranges
Type
conference paper