Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics

Resource
APPLIED PHYSICS EXPRESS, 4(11), 114202
Journal
Applied Physics Express
Journal Volume
4
Journal Issue
11
Pages
-
Date Issued
2011
Date
2011
Author(s)
Chang, Pen
Chiu, Han-Chin
Lin, Tsung-Da
Huang, Mao-Lin
Chang, Wen-Hsin
Wu, Shao-Yun
Wu, Kang-Hua
DOI
URI
Type
journal article
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23.pdf

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(MD5):3fb7ffbaf19289a9fadfc6b7fc5e5688

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