Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
Resource
APPLIED PHYSICS EXPRESS, 4(11), 114202
Journal
Applied Physics Express
Journal Volume
4
Journal Issue
11
Pages
-
Date Issued
2011
Date
2011
Author(s)
Chang, Pen
Chiu, Han-Chin
Lin, Tsung-Da
Huang, Mao-Lin
Chang, Wen-Hsin
Wu, Shao-Yun
Wu, Kang-Hua
Abstract
In-situ ultrahigh-vacuum-deposited Y2O3 2-3-monolayer-thick on freshly grown In0.53Ga0.47As with an Al2O3 cap were employed as a gate dielectric. A low interfacial density of states of (8-9) × 1011 eV-1 cm-2 near the midgap has been measured using the conductance method. The strong Y2O 3/InGaAs interfacial bonding, revealed using X-ray photoelectron spectroscopy, enables attainment of an atomically smooth interface with 750 °C annealing. Low subthreshold swing of 97 mV/decade, high drain current of 1.5 mA/μm, high transconductance of 0.77 mS/μm, and field-effect mobility of 2,100 cm2 V-1 s-1 were achieved in a self-aligned inversion-channel InGaAs metal-oxide-semiconductor field-effecttransistor of 1 μm gate length. © 2011 The Japan Society of Applied Physics.
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
23.pdf
Size
23.37 KB
Format
Adobe PDF
Checksum
(MD5):3fb7ffbaf19289a9fadfc6b7fc5e5688