Modeling the Floating-Body-Effect-Induced Drain Current Behavior of PD SOI NMOS Device Via SPICE BJT/MOS Model Approach
Journal
Compact TFT Modeling Workshop
Date Issued
2009-09
Author(s)
Abstract
The presentation of slides shows the effective use of SPICE BJT/MOS model approach in PD SOI NMOS device modelling the floating body effect induced drain current behavior. And it also discussed the evolution of CMOS VLSI circuit versus the poly-TFT approach.
Type
conference paper