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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Modeling the Floating-Body-Effect-Induced Drain Current Behavior of PD SOI NMOS Device Via SPICE BJT/MOS Model Approach
Details
Modeling the Floating-Body-Effect-Induced Drain Current Behavior of PD SOI NMOS Device Via SPICE BJT/MOS Model Approach
Journal
Compact TFT Modeling Workshop
Date Issued
2009-09
Author(s)
J. S. Su
J. B. Kuo
JAMES-B KUO
DOI
10.1109/ctft.2009.5379842
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/351957
Type
conference paper