An Inductorless Ka-Band SiGe HBT Ring Oscillator
Journal
IEEE Microwave and Wireless Components Letter
Journal Volume
15
Journal Issue
10
Pages
682-684
Date Issued
2005-10
Date
2005-10
Author(s)
DOI
246246/200611150121755
Abstract
An inductorless Ka-band silicon–germanium (SiGe)
heterojunction bipolar transistor (HBT) ring oscillator is presented.
The Ka-band operation is achieved with the addition of
a cross-coupled pair to the simple differential inverting amplifier
of a single-stage ring oscillator. Implemented with 120-GHz SiGe
HBTs, the circuit occupies an extremely compact active area of
only 0.0108mm2 due to lack of inductors. The frequency is tunable
from 28.36 to 31.96 GHz, and the single-sideband phase noise is
85.33 dBc/Hz at 1-MHz offset from 31.96 GHz. Operating on a
3-V supply, the total power consumption is 87mW. The resulting
oscillator figure-of-merit is 156 dBc/Hz. To our knowledge, this
oscillator achieves the best figure-of-merit while occupying the
least active area, when compared with other state-of-the-art
inductorless ring oscillators operating over a similar frequency
range.
Subjects
Heterojunction bipolar transistor (HBT)
inductorless
Ka-band
ring oscillator
silicon–germanium (SiGe)
SDGs
Other Subjects
Inductorless; Ka-band; Ring oscillators; Silicon-germanium (SiGe); Electric inductors; Electric power utilization; Heterojunction bipolar transistors; Power amplifiers; Semiconducting gallium compounds; Oscillators (electronic)
Publisher
Taipei:National Taiwan University Dept Elect Engn
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
2550.pdf
Size
210.84 KB
Format
Adobe PDF
Checksum
(MD5):4269ed0b0953f26ca356effbc829d769