Nearly lasing actions from metal-oxide-semiconductor structure on Si

Journal

Lasers and Electro-Optics Society Annual Meeting-LEOS

Journal Volume

2

Pages

829-830

Date Issued

2001

Author(s)

Chung, Peng-Fei

Chen, Miin-Jang

DOI

10.1109/LEOS.2001.969072

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0035653414&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/295206

http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021330/1/00969072.pdf

Abstract

We discover that SiO/sub 2/ nanoparticles could significantly improve electroluminescence (EL) at Si bandgap energy from metal-oxide-silicon (MOS) structures for orders of magnitudes. Furthermore, the nanoparticle-modified MOS exhibits nearly lasing actions like the threshold behavior and resonance modes.

SDGs

[SDGs]SDG7

Type

conference paper

File(s)

Name

00969072.pdf

Size

101.57 KB

Format

Adobe PDF

Checksum

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