Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors
Journal
Applied Physics Letters
Journal Volume
91
Journal Issue
23
Date Issued
2007
Author(s)
Chu-Kung, B.F.
Wu, C.H.
Walter, G.
Feng, M.
Holonyak Jr.
N.
Chung, T.
Ryou, J.-H.
Dupuis, R.D.
Abstract
The electrical and optical characteristics of high-gain, small-area InGaNGaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor deposition on sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μ m2 emitter device demonstrates a current gain Β=Δ IC Δ IB =49 at 3 mA and breakdown voltage, BVCEO >70 V. The radiative recombination spectrum of a large area 100×100 μ m2 emitter HBT is measured, showing a peak at 387 nm and a full width at half maximum of 47 nm. A 1 kHz modulation input is applied to the HBT and both the optical and electrical outputs of a large area device is demonstrated. © 2007 American Institute of Physics.
SDGs
Type
journal article