Implementation of High-Efficiency Photodetectors with Metal Grating Structures Using Standard CMOS Process
Date Issued
2014
Date
2014
Author(s)
Chang, Hao-Po
Abstract
This work demonstrates a new way to improve the effectiveness of photodetectors fabricated by standard silicon process technologies. With the metal layers of the standard process,we design an optical structure called optical grating. When incident light pass through this structure,the diffraction happens. Then, the optical path to the photodetector will be changed. Incident light may be uniform distribution on the photodetectors and then propagates into the deep silicon substrate. Finally, the optical absorption characteristics of photodetectors can be improved. It’s a different method from old works which improve photodetectors by changing the way of collecting carriers or the circuit of it.
The main content is the design of the optical grating and the optical simulation of structure. We have two kinds of optical gratings and the performance of light absorption of the photodetectors with optical grating are higher than the photodetectors without optical grating about 2.5~3.6 time. Then,We combine those results with the electrical simulation of photodetector and analyze the feasibility models of structure in Standard CMOS Process. Finally, we have four photodetectors which divide into control group and experimental group. Next, we will measure them and discuss.
Subjects
CMOS標準製程；光檢測器；光柵
Type
thesis
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