Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
Journal
Applied Physics Letters
Journal Volume
84
Journal Issue
23
Pages
4675-4677
Date Issued
2004
Author(s)
Abstract
A time-resolved bias-lead monitoring technique was used to analyze the ultrafast carrier dynamics in InGaN multiple-quantum-well (MQW) laser diodes. It was shown that different valence-subband-to-conduction-subband transitions in the MQW structure with different polarized pump and probe light can be selectively excited and probed from the optical selection rules of TE and TM polarized light. An ultrafast intersubband hole relaxation process was observed. The subband structure of the MQW structure of the laser diode was verified by electroluminescence measurement and calculated. Ultrafast valence intersubband hole relaxation processes were found to dominate the observed carrier dynamics using this technique.
SDGs
Type
journal article