Approaching fermi level unpinning in oxide-ino.2gao.8as
Journal
International Electron Devices Meeting
Date Issued
2008
Author(s)
Abstract
Electrical characteristics of oxide-In 0.2 Ga 0.8 As interface in ultra-high vacuum (UHV)-deposited Al 2 O 3 (3nm)/Ga 2 O 3 (Gd 2 O 3 ) (8.5nm) on n- and p-In 0.2 Ga 0.8 As/GaAs are studied. Capacitance-voltage (C-V) measurements under light illumination and under wide range of temperatures as well as corresponding conductance-voltage (G-V) measurements were carried out. Extremely high-quality interfaces with free-moving Fermi-level near the conductance and valence band-edges (regions close to E c and E v ) are revealed for the Ga 2 O 3 (Gd 2 O 3 )/In 0.2 Ga 0.8 As system.
Type
conference paper