Study of Focused Ion Beam Milling Single Spot Topography and its Superimposition Behavior
Date Issued
2015
Date
2015
Author(s)
Wu, Pei-Jia
Abstract
In this thesis, we investigated the swelling and milling due to FIB impinging, primary research is the milling topography contours. In Experiments, before FIB patterns, we adjusted FIB stigmator and focus to obtain a circular FIB profile and tight FIB. FIB scanned on the silicon substrate using single-spot, after that Atomic force microscope (AFM) measured topography of patterned silicon substrate. The substrate surface showed a Gaussian shape crater caused by FIB milling a single spot and the crater increased depth and width with longer dwell time. We observed that milling depth is linear to dwell time in limited dwell time and calculated the FIB milling speed. FIB milling speed is a Gaussian function. Accelerate voltage and beam current affect milling speed. The higher milling current results in higher milling speed, and Gaussian function became taller and broad. Accelerate voltage affects width of milling single spot, lower Accelerate voltage wider Gaussian shape is. This thesis presents the predicted topography of FIB milling single spot, two spots, line and square fabrication by milling speed function. The predicted topography are compared with experiments. We did the double spot experiments to explain the deviations occurs because of energy accumulation. At the end of thesis, we show adjusting pitch reduce the fluctuate of line fabrication bottom.
Subjects
focused ion beam
FIB
swelling
milling
silicon
milling speed
accelerate voltage
beam current
topography
depth
Type
thesis
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