Silicon based nano-structure field emission light emitting device
Date Issued
2004
Date
2004
Author(s)
Su, Yu-Lun
DOI
zh-TW
Abstract
In this thesis, we develop the silicon based metal nano-pillar structure and silicon dry etching nano-pillar structure. Then use the phosphor and vacuum system to make the main field emission display(FED) device.
In my experience the silicon wafer is coated a metal thin film and spin coated the nano-particle. Then I add voltage on the device to produce the nano-pillar structure on the thin metal film over the silicon. This method is quick and the process is easy. I also measured its conditions to understand the factor of the forming of the nano-pillar. Spin coating the nano-particle on the silicon wafer is another method. I use the dry etching method to make the nano-pillar structure on silicon wafer. The condition is easy to control and it has uniform dry etching surface.
Then I put the completed nano-device and the ITO glass coated by phosphor together, then put them into the vacuum system, I add the voltage to emit the electrons. We find that the uniform of nano-particle will effect the nano-pillar structure and the phenomenon of field emission.
At last I find the disadvantages of the field emission device and find the improvements. I use the photo mask lithography process to protect the nano-pillar structure, and measure the spectrum of the device. We find the field emission efficiency and the conditions of voltage and current, etc. I also bring up some improvements to overcome the problems.
Subjects
矽奈米結構
場發射
field emission
nano-structure
Type
thesis
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