Development of random access memory in Nd0.7Ca 0.3MnO3/YBa2Cu3O7 heterostructure
Resource
THIN SOLID FILMS, 518(20), 5673-5675
Journal
Thin Solid Films
Pages
5673-5675
Date Issued
2010
Date
2010
Abstract
The effects of electrode on the resistive switching in Nd 0.7Ca0.3MnO3(NCMO)/YBa2Cu 3O7(YBCO) heterostructure are investigated at room temperature. For Cu/NCMO/YBCO, resistance can be switched on-and-off from a high- to low-resistance state at a steady ratio of 25% with a pulsed-voltage of ± 3 V. On the other hand, a giant resistance-change as large as 1350% is observed with ± 5 V for Ag/NCMO/YBCO with a fast decay down to 550%. Our experimental results show clear evidences that the nature of interfaces can be modified by the electric field and it dictates the resistive switching behavior of these heterostructure devices, which are the potential candidates for the random access memory. © 2009 Elsevier B.V. All rights reserved.
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