Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells
Journal
Japanese Journal of Applied Physics
Journal Volume
43
Journal Issue
10
Pages
7032-7035
Date Issued
2004
Date
2004
Author(s)
Abstract
The thickness of the separate confinement heterostructure (SCH) layer is found to have a significant influence on the carrier distribution among InGaAsP multiple quantum wells in laser diodes. When the SCH layer is 120nm thick, the carrier distribution of the fabricated laser diodes favors quantum wells near the n-cladding layer. When the thickness of the SCH layer is reduced to 20 nm, the carrier distribution of the fabricated laser diodes favors quantum wells near the p-cladding layer. Our experiments indicate that the carrier distribution of a fabricated laser diode can be engineered using an SCH layer of appropriate thickness.
Subjects
Carrier distribution; Laser diode; Multiple quantum wells; Nonidentical multiple quantum wells; Separate confinement heterosturcture
Other Subjects
Cladding (coating); Electric currents; Heterojunctions; Light absorption; Semiconducting indium compounds; Semiconductor lasers; Carrier distribution; Fabry-Perot laser diodes; Nonidentical multiple quantum wells; Separate confinement heterostructure; Semiconductor quantum wells
Type
journal article
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