Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectric
Journal
Applied Physics Letters
Journal Volume
93
Journal Issue
5
Date Issued
2008
Author(s)
Chang, Y.C.
Chang, W.H.
Chiu, H.C.
Tung, L.T.
Lee, C.H.
Shiu, K.H.
Hong, M.
Kwo, J.
Tsai, C.C.
Type
journal article