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College of Science / 理學院
Applied Physics / 應用物理研究所
MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD
Details
MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD
Journal
APS Meeting Abstracts
Journal Volume
1
Pages
20002
Date Issued
2007
Author(s)
Lee, Kun Yu
Lee, WC
Lin, TD
Lee, CS
Chang, YC
Lee, YJ
Huang, ML
Wu, YD
MINGHWEI HONG
Kwo, J
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/331384
Type
conference paper
