Ferroelectric Memcapacitor on SOI for High Capacitive Ratio by Mechanism of Depletion Capacitance Modulation Toward Dimension Scaling Down
Journal
IEEE Electron Device Letters
Start Page
1-1
ISSN
0741-3106
1558-0563
Date Issued
2025-12-24
Author(s)
Abstract
A CHCS/CLCS ratio of 500× for a ferroelectric capacitive memory (FCM) with an SOI substrate has been demonstrated as an ideal synaptic operation achievement. This ratio is a crucial parameter in FCM as it indicates the ability of the memory to store and retrieve data reliably. The modulated depletion region could be expanded laterally due to the spatial restriction in the vertical direction by the SOI to reduce CLCS; moreover, a low-voltage-based saturation capacitance of double Hf1-xZrxO2 (DHZO) further enhanced CHCS. For DHZO-SOI FCMs, the outstanding nondestructive read operation (NDRO) was experimentally exhibited with >109 cycles by both devices and readout schemes, αP/αD = -0.25 / +1.55 for synapse. The proposed technique is simulated with a remaining ratio of 73× for pillar FCM scaling to 20nm, a promising concept that benefits the dimension scaling pathway. © 1980-2012 IEEE.
Subjects
ferroelectric capacitive memory
SOI
synapse
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Type
journal article